4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535,
appendix A.
4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices
prior to quality conformance inspection. The following additional criteria shall apply:
a. Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition D or F. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1015 of MIL-STD-883.
(2) TA = +125°C, minimum.
(3) Devices shall be burned-in containing a checkerboard pattern or equivalent.
b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter
tests prior to burn-in are optional at the discretion of the manufacturer.
c. An endurance/data retention test prior to burn-in, in accordance with method 1033 of MIL-STD-883, shall be included
as part of the screening procedure with the following conditions:
(1) Cycling may be block, byte, or page at equipment room ambient temperature and shall cycle all bytes for a minimum
of 10,000 cycles for devices 01-04, 06,07, 09-12, 14,15 and a minimum of 50,000 cycles for device 05,08,13, and
16.
(2) After cycling, perform a high temperature unbiased bake for 72 hours at +150°C (minimum). The storage time may
be accelerated by using higher temperature in accordance with the Arrhenius Relationship:
A = acceleration factor (unitless quantity) = t / t
2
F
1
T = temperature in Kelvin (i.e., t + 273)
1
t1 = time (hrs) at temperature T1
t2 = time (hrs) at temperature T2
K = Boltzmanns constant = 8.62 x 10-5eV/°K using an apparent activation energy (E ) of 0.6 eV.
A
The maximum storage temperature shall not exceed +200°C for packaged devices or +300°C for unassembled devices.
(3) Read the data retention pattern and test using subgroups 1, 7, and 9 (minimum, e.g., high temperature equivalent
subgroups 2, 8A, and 10 may be used) after cycling and bake, prior to burn-in. Devices having bits not in the proper
state after storage shall constitute a device failure.
4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of
MIL-STD-883 including groups A, B, C, and D inspections. The following additional criteria shall apply.
4.3.1 Group A inspection.
a. Tests shall be as specified in table II herein.
b. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
c. Subgroup 4 (CI and CO measurement) shall be measured only for the initial test and after process or design changes
which may affect input or output capacitance.
SIZE
STANDARD
5962-88525
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
SHEET
D
20
DSCC FORM 2234
APR 97