WTE
POWER SEMICONDUCTORS
Pb
UF5400 – UF5408
3.0A ULTRAFAST DIODE
Features
!
Diffused Junction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-201AD
Min
Dim
A
Max
—
!
!
!
!
!
25.4
B
7.20
9.50
1.30
5.30
C
1.20
D
4.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UF
UF
UF
UF
UF
UF
UF
UF
Characteristic
Symbol
Unit
5400 5401 5402 5403 5404 5406 5407 5408
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
(Note 1)
3.0
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 3.0A
VFM
IRM
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
10
100
µA
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
trr
Cj
50
80
75
50
nS
pF
°C
°C
Tj
-65 to +125
-65 to +150
Storage Temperature Range
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
UF5400 – UF5408
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
