WTE
POWER SEMICONDUCTORS
Pb
1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE
S1A – S1M
Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Power Loss
Built-in Strain Relief
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E
SMB/DO-214AA
Mechanical Data
Dim
A
Min
3.30
4.06
1.91
0.152
5.08
2.13
0.051
0.76
Max
3.94
4.70
2.11
!
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Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
B
C
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Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
0.305
5.59
2.44
0.203
1.27
E
F
G
H
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
1.0
V
A
Average Rectified Output Current @TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
1.10
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
5.0
200
µA
Reverse Recovery Time (Note 1)
trr
Cj
2.5
15
µS
pF
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
RꢀJL
Tj, TSTG
30
°C/W
°C
-65 to +175
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
S1A – S1M
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
