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ES1J 参数 Datasheet PDF下载

ES1J图片预览
型号: ES1J
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0A表面安装玻璃钝化超快速二极管 [1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE]
分类和应用: 二极管光电二极管IOT
文件页数/大小: 4 页 / 53 K
品牌: WTE [ WON-TOP ELECTRONICS ]
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I
(AV)
, AVERAGE FWD RECTIFIED CURRENT (A)
Single phase half wave
Resistive or Inductive load
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1.00
10
T
j
= 25
°
C
Pulse width = 300
µ
s
0.75
ES1A - ES1D
ES1E - ES1G
1.0
0.50
ES1J
0.1
0.25
0
0
25
50
75
100
125
150
175
T
L
, LEAD TEMPERATURE
(
°
C)
Fig. 1 Forward Current Derating Curve
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
30
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1.0MHz
20
C
j
, CAPACITANCE (pF)
10
10
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
50
NI (Non-inductive)
10
NI
100
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
ES1A – ES1J
2 of 4
© 2006 Won-Top Electronics