®
BAV99RW
WON-TOP ELECTRONICS
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage Drop
@ I
R
= 100µA
@ I
F
= 1.0mA
@ I
F
= 10mA
@ I
F
= 50mA
@ I
F
= 150mA
@ V
R
= 70V, T
J
= 25°C
@ V
R
= 25V, T
J
= 150°C
@ V
R
= 70V, T
J
= 150°C
Symbol
V
(BR)
Min.
70
Typ.
Max.
Unit
V
V
FM
0.715
0.855
1.0
1.25
2.5
30
50
1.5
6.0
V
Peak Reverse Leakage Current
I
RM
C
D
t
rr
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
100
µA
pF
nS
Diode Capacitance (V
R
= 0V, f = 1.0MHz)
Reverse Recovery Time (I
F
= I
R
= 10mA, I
RR
= 0.1 x I
R
, R
L
= 100Ω)
250
P
D
, POWER DISSIPATION (mW)
200
10
150
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
100
1.0
50
T
A
= -40°C
0
0
15
30
45
60
75
90 105 120 135 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
0.1
0
0.2
0.4
0.6
0.8
1.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
2.0
1.8
C
T
, TOTAL CAPACITANCE (pF)
1.6
f = 1.0MHz
10000
T
A
= 150°C
T
A
= 125°C
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
100
T
A
= 75°C
10
T
A
= 25°C
T
A
= 0°C
1.0
T
A
= -40°C
0.1
0
20
40
60
80
100
V
R
, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
© Won-Top Electronics Co., Ltd.
Revision: April, 2012
www.wontop.com
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