Production Data
WM2626
ELECTRICAL CHARACTERISTICS
Test Conditions:
RL = 10kΩ, CL = 100pF. VDD = 5V ±10%, VREF = 2.048V and VDD = 3V ±10%, VREF = 1.024V over recommended operating free-
air temperature range (unless noted otherwise).
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static DAC Specifications
Resolution
8
bits
Integral non-linearity
INL
End point adjusted
See Note 1
±0.4
±1
LSB
Differential non-linearity
Zero code error
DNL
ZCE
See Note 2
±0.1
±0.5
±24
LSB
mV
See Note 3
See Note 4
See Note 5
See Note 6
See Note 6
Gain error
GE
±0.6
% FSR
dB
D.C. power supply rejection ratio
Zero code error temperature coefficient
Gain error temperature coefficient
DAC Output Specifications
Output voltage range
D.C. PSRR
65
10
10
ppm/°C
ppm/°C
0
VDD - 0.4
0.25
V
Output load regulation
2kΩ to 10kΩ load
See Note 7
% FS
Power Supplies
No load, DAC value = 128,
all digital inputs 0V or VDD
Fast
Active supply current
IDD
4.2
2
7
VDD=5V
Internal
Reference
Fast
Slow
3.6
6.3
3.0
6.3
3.0
5.7
2.6
3.7
1.7
3.8
1.7
3.4
1.4
1
VDD=3V
Slow
mA
Fast
VDD=5V
External
Reference
Slow
Fast
VDD=3V
Slow
Power down supply current
Dynamic DAC Specifications
Slew rate
µA
SR
ts
RL = 10kΩ, CL = 100pF
Slow
Fast
12
1.8
V/µs
V/µs
See Note 9
RL = 10kΩ, CL = 100pF
Slow
Settling time
Glitch energy
2.8
0.8
5.5
2.4
µs
µs
Fast
See Note 10
DIN = 0 to 1, fCLK = 100kHz,
NCS = VDD
5
nV-s
Signal to noise ratio
SNR
SINAD
THD
53
47
57
48
dB
dB
dB
dB
fs = 480kSPS,
Signal to noise and distortion ratio
Total harmonic distortion
Spurious free dynamic range
f
OUT = 1kHz,
RL = 10kΩ, CL = 100pF
-50
62
-48
See Note 11
SFDR
50
WOLFSON MICROELECTRONICS LTD
PD Rev 1.0 April 2001
3