DTC114TKA
硅NPN双极晶�½�管
■■ 主要用途：开关、倒相、驱动电路等。
■■
MAXIMUM RATINGS(Ta=25℃)
最大额定值
符号
CHARACTERISTIC
特性参数
SYMBOL
集电极-发射极电压
额定值
RATING
单�½�
UNIT
Collector-Emitter Voltage
集电极-基极电压
V
CEO
50
50
5
100
200
150
-55�½�150
V
V
V
mA
mW
℃
℃
Collector-Base Voltage
发射极-基极电压
V
CBO
V
EBO
I
C
P
C
Tj
Tstg
Emitter-Base Voltage
集电极连续电流
Collector Current—Continuous
集电极耗散功率
Collector Power Dissipation
结温
Junction Temperature
储存温度
Storage Temperature Range
■■
ELECTRICAL CHARACTERISTICS
电特性
(Ta=25℃
unless otherwise noted
如无特殊说明，温度为25℃)
测试条件
特性参数
符号
TEST CONDITION
CHARACTERISTIC
SYMBOL
集电极-基极反向截止电流
V
CB
=50V, I
E
=0
I
CBO
最小值 典型值 最大值 单�½�
MIN. TYPE MAX. UNIT
Collector Cut-off Current
—
—
50
50
5
100
—
7
—
—
—
—
—
—
300
—
10
250
0.5
0.5
—
—
—
600
0.3
13
—
µA
µA
V
V
V
—
V
KΩ
MHz
发射极-基极反向截止电流
Emitter Cut-off Current
集电极-发射极反向击穿电压
I
EBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
V
CE(sat)
R
1
f
T
打标、分档
04
100-600
V
EB
=4V, I
C
=0
I
C
=1.0mA
I
C
=50µA
I
E
=50µA
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
—
V
CE
=10V, I
E
=-5mA,
f=100MHz
Collector-Emitter Breakdown Voltage
集电极-基极反向击穿电压
Collector-Base Breakdown Voltage
发射极-基极反向击穿电压
Emitter-Base Breakdown Voltage
直流电流增益
DC Current Gain
集电极-发射极饱和压降
Collector-Emitter Saturation Voltage
输入电阻
Input Resistance
特征频率
Transition Frequency
■■
DEVICE MARKING
Making
Classification
h
FE
PDS-A-512
WK [ WOLFGANG KNAP ]
