Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
102
101
100
102
101
100
Bottom : 4.5 V
175℃
25℃
-55℃
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 30V
2. 250µ s Pulse Test
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0.00
102
101
100
VGS = 10V
VGS = 20V
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
70
140
210
280
350
ID , Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
7000
6000
5000
4000
3000
2000
1000
0
12
10
8
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = C
VDS = 30V
VDS = 48V
gd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
6
oss
C
iss
4
2
C
rss
※ Note : ID = 75A
0
-1
10
100
101
0
10
20
30
40
50
60
70
80
90
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WISDOM [ WISDOM TECHNOLOGIES INT`L ]
