WS2259
Electrical Characteristics (TA=25℃，VCC=16V, if not otherwise noted)
Supply Voltage (VDD)
Parameter
Symbol
VDD_OP
Test condition
Min Typ Max Unit
Operation voltage
30
8
V
Turn on threshold Voltage
Turn-off threshold Voltage
Start up current
UVLO_ON
UVLO_OFF
I_VDD_ST
6.8
7.5
14.5
4
V
13.5
15.5
10
V
VDD=13V,RI=100K
uA
VDD=16V,RI=100K,VFB=3V
GATE with 1nF to GND
Operation Current
I_VDD_OP
1.7
2.3
mA
VDD_OVP
29
31
V
V
VDD Zener Clamp Voltage
VDD_Clamp
IVDD=10mA
Feedback Input Section
VFB Open Loop Voltage
FB Pin Short Current
VFB_Open
IFB_Short
VTH_PL
TD_PL
VDD=16V,FB open,
5.4
0.3
3.2
48
5.9
6.4
V
FB Shorted to GND
0.45
3.65
60
0.6
4.0
72
mA
Power limiting FB Threshold
Power limiting Debounce
Input Impedance
VDD=16V, RI=100K
V
VDD=16V,FB open,RI=100KΩ
VDD=16V,FB=2V/3V,CS open
VDD=16V,FB open,
ms
kΩ
ZFB_IN
11.5
14.5
18
Maximum duty cycle
Max_Duty
72
77
82
%
CS=0,RI=100KΩ
Current Sense Section
Leading edge Blanking Time
OCP control delay
TLEB
330
70
ns
ns
V
TD_OC
TTH_OC
GATE with 1nF to GND
OCP threshold
FB＝3.2V
0.68
60
0.78
0.78
70
Oscillator Section
Frequency
Fosc
VDD=16V,RI=100K,,FB=3.2V
For 65K
65
4
khz
ms
%
Jitter period
Jitter range
Fosc_BM
∆f_temp
∆f_VDD
±5
22
5
Burst mode frequency
VDD=9.5V,RI=100K, FB=1V
TEMP = -20 to 85℃
VDD = 12 to 25V
khz
%
Frequency variation versus temp. Deviation
Frequency variation versus VDD
5
%
RI Section
RI voltage
VRI
VDD=16V,RI=100KΩ,CS=1V
1.94
2
2.06
V
Thermal protection
Thermal shutdown temperature
T_shutdown
150
℃
GATE Output Section
Output voltage Low
Output voltage high
Output clamp voltage
Rising time
VOL
VOH
VClamp
Tr
VDD = 16V, Io = -20mA
VDD = 16V, Io = 20mA
0.8
V
9
V
VDD = 20V
11
13
250
75
14.5
V
VDD = 16V, GATE with 1nF to GND
VDD = 16V, GATE with 1nF to GND
ns
ns
Falling time
Tf
5/11
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
