WS21351
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min.
Typ.
Max.
Unit
VB
High-side floating supply
-0.3
-0.3
-0.3
-25
-50
-25
-65
600
575
7
VOUT
VIN
Half bridge output
V
RMIN, CPH pins input voltage
Clamping current level
ICL
25
mA
dVOUT/dt
TA
Allowable offset voltage slew rate
Operating temperature range
Storage temperature range
Lead temperature (soldering,10 seconds)
50
V/ns
125
150
300
TSTG
TL
°C
Note: more than the limit specified in the table parameters will result in permanent damage to the device. The device is not recommended in
these extreme conditions of work, working conditions in the limit above which may affect device reliability.
Electrical Characteristics (VBIAS(VDD, VB-Vout)=14.0V, TA=25°C, unless otherwise specified.)
Symbol
Parameter
Condition
Min.
Typ. Max. Unit
Supply characteristics
VDDTH(ST+)
VDDTH(ST-)
VDDHY(ST)
VCL
VDD UVLO positive going threshold
VDD UVLO negative going threshold
VDD-side UVLO hysteresis
VDD rising from 0V
VDD decreasing
11.2
9
12.8
10
14
11
V
2．8
15．6
50
Supply clamping voltage
IDD =20mA
14．4
IST
Start-up supply current
VDD = 10V
80
μA
IDD
Dynamic operating supply current
Running freq=85KHZ
4．5
mA
Floating supply characteristics (VB-VOUT)
VHSTH(ST+)
VHSTH(ST-)
VHSHY(ST)
IHST
High-side UVLO positive going threshold
High-side UVLO negative going threshold
High-side UVLO hysteresis
VB –VOUT increasing
VB –VOUT decreasing
7．5
7．8
9
8
1
10．5
9．2
V
High-side quiescent supply current
VB –VOUT = 14V
60
uA
Oscillator characteristics
fPRE
fOSC
Duty
DT
Preheating frequency
Running frequency
Oscillator duty cycle
Output dead time
RMIN = 82kΩ, VCPH =0V 66
RMIN = 82kΩ, VCPH =6V 29
86
34
50
2．0
6
96
39
kHz
kHz
%
Us
V
VCPH
Maximum CPH voltage
MOSFET characteristics
ILKMOS
MOSFET leakage current
VDS = 500V
10
μA
Ω
VGS = 12V, ID = 100mA
VGS = 12V, ID = 500mA
8
RON
On resistance (dynamic)
10
3/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
