WFW18N50
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.265Ω)@VGS=10V
Ultra-low Gate charge(Typical 42nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
Value
500
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
18
A
ID
12.7
80
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
330
mJ
mJ
V/ ns
W
EAR
dv/dt
PD
27.7
4.5
280
TJ,Tstg
TL
-55~150
300
℃
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
0.45
-
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
-
-
-
-
0.24
-
℃/W
℃/W
℃/W
Thermal Resistance , Junction-to -Ambient
40
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
