WFW13N50
Silicon N-Channel MOSFET
Features
■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
■
■
Ultra-low Gate charge(Typical 43nC)
Fast Switching Capability
■
■
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,DMOS technology.This latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
high efficiencyswitch model power supplies, power factor correction
and half bridge and full bridge resonant topology line a electronic
lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
Value
500
13
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
8
A
IDM
VGS
EAS
(Note1)
52
A
Gate to Source Voltage
±30
845
5
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
mJ
mJ
V/ ns
W
EAR
dv/dt
3.5
218
1.56
-55~150
300
PD
W/℃
℃
TJ,Tstg
TL
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
0.58
-
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
-
-
-
-
0.5
-
℃/W
℃/W
Thermal Resistance , Junction-to -Ambient
62.5
℃
/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
