WFU4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 16nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has
been Especially designed to minimize on-state resistance,
have a high Rugged avalanche characteristics. This devices
is specially well Suited for half bridge and full bridge resonant
topology line a Electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
Value
600
4
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
2.5
A
IDM
VGS
EAS
(Note1)
16
A
Gate to Source Voltage
±30
240
10
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
4.5
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
80
PD
0.78
-55~150
300
W/℃
℃
TJ, Tstg
TL
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
RQJC
RQJA
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
-
-
1.56
℃/W
℃/W
℃/W
50
-
-
110
*When mounted on the minimum pad size recommended(PCB Mount)
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
