WFP830B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=500V,VGS=0V
VDS=400V,TC=125℃
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25℃
Min
Type Max
Unit
nA
V
Gate leakage current
-
±30
-
-
-
-
±100
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
-
1
µA
µA
V
IDSS
10
-
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
500
-
-
△BVDSS
△TJ
VGS(th)
RDS(ON)
gfs
/
0.5
-
V/℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=VGS,ID=250 µA
VGS=10V,ID=2.5A
VDS=40V,ID=2.5A
VDS=25V,
3
-
-
-
-
-
-
-
-
-
-
4.5
1.6
-
V
Ω
S
1.43
5.2
480
15
Ciss
625
20
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f=1MHz
Coss
tr
80
105
100
35
Rise time
VDD=250V,
ID=5A
46
Turn-on time
Switching time
ton
12
RG=25Ω
Fall time
tf
48
105
110
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
50
VDD=400V,
VGS=10V,
ID=5A
Qg
-
18
24
nC
Gate-source charge
Qgs
Qgd
-
-
2.2
9.7
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min
Type Max
Unit
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
5
20
1.4
-
A
IDR=5A,VGS=0V
IDR=5A,VGS=0V,
dIDR / dt =100 A / µs
-
V
263
1.9
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=21.5mH IAS=5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance