WFP630
Silicon N-Channel MOSFET
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 22nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor control.
G
D
S
TO220
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
Drain Source Voltage
200
9
V
A
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
ID
5.7
A
IDM
(Note1)
36
A
VGS
EAS
EAR
dv/dt
Gate to Source Voltage
±30
160
7.2
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
V/ns
W
Peak Diode Recovery dv/dt
5.5
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
72
PD
0.57
-55~150
300
W/℃
℃
TJ, Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
1.74
-
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
-
-
-
-
0.5
-
℃/W
℃/W
℃/W
Thermal Resistance, Junction-to-Ambient
62.5
Rev, C Dec.2008
T01-3
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
