WFP3205
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG=±10 µA,VDS=0V
VDS=50V,VGS=0V
ID=250 µA,VGS=0V
ID=1mA,
Min Type Max Unit
Gate leakage current
-
±30
-
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
IDSS
-
10
-
µA
V
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
50
△BVDSS
△TJ
VGS(th)
RDS(ON)
gfs
/
-
0.057
-
V/℃
Referenced to 25℃
VDS=VGS,ID=250 µA
VGS=10V,ID=60A
VDS=25V,ID=60A
VDS=25V,
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
2
-
-
-
4
V
mΩ
S
8.0
44
-
-
-
-
-
-
-
-
-
-
Ciss
3247
211
781
101
14
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
-
pF
ns
f=1MHz
Coss
tr
-
Rise time
VDD=28V,
-
ID=60A
Turn-on time
Switching time
ton
-
RG=4.5Ω
Fall time
tf
-
65
VGS=10V (Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
-
50
VDS=44V,
VGS=10V,
ID=60A
Qg
-
133
146
nC
Gate-source charge
Qgs
Qgd
-
-
-
-
35
54
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
110
390
1.4
A
A
IDR=60A,VGS=0V
IDR=60A,VGS=0V,
dIDR / dt =100 A / µs
-
V
69
143
104
215
ns
µC
Reverse recovery charge
Qrr
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=138uH IAS=60A,,RG=25Ω,Starting TJ=25℃
3.ISD≤60A,di/dt≤207A/us,VDD<BVDSS, TJ≤150℃
4.Pulse Test:Pulse Width≤400us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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