WFP3205T
Silicon N-Channel MOSFET
Features
■ 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V
■ Ultra-low Gate charge(Typical 50nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe,DMOS technology. This latest technology has
beenespecially designed to minimize on-state resistance ,have
a lowgate charge with superior switching performance ,and
ruggedavalanche characteristics.This Power MOSFET is well
suited for synchronous DC-DC Converters and power
Management inportable and battery operated products.
Absolute Maximum Ratings
Symbol
Parameter
Value
60
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
109
80
A
ID
A
IDM
VGS
(Note1)
390
±20
20
A
Gate to Source Voltage
V
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note1)
(Note3)
mJ
V/ ns
W
dv/dt
5.0
150
1.0
PD
W/℃
℃
TJ,Tstg
TL
-55~150
300
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
1.0
-
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
-
-
-
-
0.5
-
℃/W
℃/W
℃/W
Thermal Resistance , Junction-to -Ambient
62
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
