WFP2N60B
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, Tc = 125°C
ID = 250 μA, VGS = 0 V
Min Typ. Max Unit
Gate leakage current
-
±30
-
-
-
-
-
-
±100
nA
Gate−source breakdown voltage
V(BR)GSS
-
10
100
-
V
μA
μA
V
Drain cut−off current
IDSS
-
Drain−source breakdown voltage
V(BR)DSS
600
ΔBVDSS
ΔTJ
/
Break Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
V/℃
-
0.5
-
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
VDS = 10 V, ID =250 μA
VGS = 10 V, ID =1A
VDS = 50 V, ID =1A
VDS = 25 V,
2
-
-
-
-
-
-
-
-
-
-
4
4.7
-
V
Ω
S
RDS(ON)
gfs
Ciss
Crss
Coss
tr
4.5
2.25
280
45
330
55
7
Reverse transfer capacitance
Output capacitance
VGS = 0 V,
pF
f = 1 MHz
4.5
10
Rise time
28
55
60
60
VDD =300 V,
ID = 2 A
Turn−on time
Switching time
ton
25
ns
RG=25 Ω
Fall time
tf
20
(Note4,5)
Turn−off time
Total gate charge (gate−source
plus gate−drain)
toff
25
VDD = 320 V,
VGS = 10 V,
ID = 2 A
Qg
-
9.0
12
nC
Gate−source charge
Qgs
Qgd
-
-
1.7
4.5
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
2
8
A
A
IDR = 2 A, VGS = 0 V
-
1.4
-
V
Reverse recovery time
180
0.72
ns
IDR = 2 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Reverse recovery charge
Qrr
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=2.0A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤2.0A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
