WFP18N20
Silicon N-Channel MOSFET
Features
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18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V
Ultra-low Gate Charge(Typical 40nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters,and DC motor control.
Absolute Maximum Ratings
Symbol
Parameter
Value
200
18
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
12
A
IDM
VGS
EAS
(Note1)
72
A
Gate to Source Voltage
±30
580
13
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
mJ
mJ
V/ ns
W
EAR
dv/dt
5
140
0.78
-55~150
300
PD
W/℃
℃
TJ,Tstg
TL
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
0.89
-
RQJC
RACS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance, Case- to -Sink
-
-
-
-
0.5
-
℃/W
℃/W
℃/W
Thermal Resistance , Junction-to -Ambient
62.5
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
