WFP12N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
Min
-
Type Max
Unit
nA
Gate leakage current
-
±100
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
±30
-
-
V
IDSS
VDS = 500 V, VGS = 0 V
-
-
-
1
-
μA
V
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
ΔBVDSS/
ΔTJ
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to
25℃
600
-
0.5
-
V/℃
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 6.0A
VDS = 50 V, ID = 6.0A
VDS = 25 V,
3
-
-
-
-
-
-
-
-
-
4.5
0.65
-
V
Ω
S
0.37
15
Ciss
1580
180
20
2055
235
25
VGS = 0 V,
Reverse transfer capacitance
Output capacitance
Crss
pF
f = 1 MHz
Coss
Rise time
tr
VDD =250 V,
ID =12A
25
60
Turn−on time
ton
100
130
210
270
Switching time
RG=9.1Ω
RD=31Ω
ns
Fall time
tf
Turn−off time
toff
Qg
-
-
100
43
210
56
(Note4,5)
VDD = 400 V,
VGS = 10 V,
ID = 1 A
Total gate charge (gate−source
plus gate−drain)
nC
Gate−source charge
Qgs
Qgd
-
-
7.5
-
-
(Note4,5)
Gate−drain (“miller”) Charge
18.5
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
Test Condition
Min
Type
Max
Unit
A
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
12
48
1.4
-
-
-
A
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
Reverse recovery time
418
4.85
ns
μC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
