WFF8N60B
Silicon N-Channel MOSFET
Features
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7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
Ultra-low Gate charge(Typical 28nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage (VISO=4000V AC)
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
Value
600
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
7.5*
4.3*
30*
A
ID
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
240
mJ
mJ
V/ ns
W
EAR
dv/dt
15
4.5
45
PD
0.35
-55~150
300
W/℃
℃
TJ,Tstg
TL
℃
*Drain current limited by junction temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
2.8
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
-
-
℃/W
℃/W
-
-
62.5
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
