WFF630
Electrical Characteristics (Tc = 25°C)
Characteristics
Test Condition
Symbol
IGSS
Min Type Max Unit
Gate leakage current
-
±30
-
-
-
-
-
±100
nA
V
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 200 V, VGS = 0 V
ID = 250 μA, VGS = 0 V
Gate−source breakdown voltage
Drain cut−off current
-
10
-
V(BR)GSS
IDSS
μA
V
Drain−source breakdown voltage
200
V(BR)DSS
ΔBVDSS
/
Break Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
-
0.2
-
V/℃
ΔTJ
Gate threshold voltage
2
-
-
-
-
-
-
-
-
-
-
4
0.4
-
V
Ω
S
VGS(th)
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 4.5A
VDS = 50 V, ID = 4.5A
Drain−source ON resistance
Forward Transconductance
Input capacitance
RDS(ON)
gfs
Ciss
Crss
Coss
tr
7.05
500
23
85
11
70
60
720
30
VDS = 25 V,
VGS = 0 V,
Reverse transfer capacitance
pF
f = 1 MHz
Output capacitance
Rise time
110
30
VDD =100 V,
ID = 9 A
Turn−on time
150
130
ton
RG=12 Ω
Switching time
Fall time
ns
tf
Turn−off time
toff
-
-
65
22
140
29
(Note4,5)
Total gate charge (gate−source
plus gate−drain)
VDD = 160 V,
VGS = 10 V,
ID = 9 A
Qg
nC
Gate−source charge
Qgs
Qgd
-
-
3.6
10
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Test Condition
Symbol
Min Type Max Unit
Continuous drain reverse current IDR
-
-
-
-
-
-
-
-
-
9
36
1.5
-
A
A
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDRP
VDSF
trr
IDR = 9 A, VGS = 0 V
IDR = 9A, VGS = 0 V,
dIDR / dt = 100 A / μs
1.4
140
1.1
V
ns
2.2
Qrr
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9A,VDD=50V,RG=0Ω,StartingTJ=25℃
3.ISD≤9A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,DutyCycle≤2%
5.Essentiallyindependent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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