WFF2N60B
Silicon N-Channel MOSFET
Features
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2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
Ultra-low Gate Charge(Typical 9nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
Value
600
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
2.0*
1.5*
9.5*
±30
A
ID
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
140
mJ
mJ
V/ ns
W
EAR
dv/dt
2.8
4.5
20
PD
0.15
-55~150
300
W/℃
℃
TJ,Tstg
TL
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
6.25
62.5
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
-
-
℃/W
℃/W
-
-
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
