WFF2N65B
Silicon N-Channel MOSFET
Features
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2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V
Ultra-low Gate Charge(Typical 9.0nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage(VISO=4000V AC)
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
Value
650
2*
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
1.3*
16*
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
240
10
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
(Note2)
(Note1)
(Note3)
mJ
mJ
V/ ns
W
EAR
dv/dt
Peak Diode Recovery dv /dt
4.5
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
20
PD
0.26
-55~150
300
W/℃
℃
TJ,Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
6.25
-
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
-
0.5
-
-
-
-
℃/W
℃/W
℃/W
Thermal Resistance , Junction-to -Ambient
62.5
Rev.A Apr.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
