WFF12N60
Silicon N-Channel MOSFET
Features
■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 39nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
Electronic lamp ballast.
G
D
S
TO220F
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
600
12*
Units
Drain Source Voltage
V
A
A
A
V
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
ID
7.6*
48*
IDM
(Note1)
VGS
Gate to Source Voltage
±30
Single Pulsed Avalanche Energy
2)
Repetitive Avalanche Energy
1)
(Note
(Note
EAS
880
25
mJ
mJ
EAR
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
51
V/ns
W
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
PD
W/℃
℃
0.41
TJ, Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
-55~150
300
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
2.45
-
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
-
-
-
-
0.5
-
℃/W
℃/W
℃/W
Thermal Resistance, Junction-to-Ambient
62.5
Rev. C Nov.2008
T03-1
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
