WFD4N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
Min
-
Type Max Unit
Gate leakage current
-
±100
nA
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
±30
-
-
V
VDS = 600 V, VGS = 0 V
-
-
-
-
10
μA
μA
IDSS
VDS = 480 V, Tc = 125°C
100
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
Ciss
ID = 250 μA, VGS = 0 V
VDS = 10 V, ID =250 μA
VGS = 10 V, ID =3.25A
VDS = 25 V,
600
-
-
-
V
V
Ω
2
-
-
-
-
-
-
-
-
4
1.8
545
7
2.5
670
10
90
30
80
100
50
VGS = 0 V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f = 1 MHz
Coss
tr
70
10
35
45
20
Rise time
VDD =300 V,
ID = 4.4 A
RG=25 Ω
Turn−on time
Switching time
ton
Fall time
tf
(Note4,5)
Turn−off time
Total gate charge (gate−source
plus gate−drain)
toff
VDD = 480 V,
VGS = 10 V,
ID =4.4A
Qg
-
16
20
nC
Gate−source charge
Qgs
Qgd
-
-
3.4
7
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
IDR
Test Condition
Min
Type Max Unit
-
-
-
-
-
-
-
4
17.6
1.4
-
A
IDRP
-
-
A
VDSF
trr
IDR =4.4 A, VGS = 0 V
IDR = 4.4 A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
Reverse recovery time
390
2.2
ns
μC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤4A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
