WCD8C60S
Electrical Characteristics (TJ=25℃ ,RGK=1KΩ unless otherwise specified)
Value
Units
Symbol
Min Typ Max
TC=25℃
-
-
5
2
μA
mA
V
Off-state leakage current
IDRM/IRRM
(VAK=VDRM/VRRM
)
TC=125℃
(Note2.1)
VTM
Forward "On"voltage (ITM=16A tp=380µs)
-
1.2
-
1.6
Gate Trigger Current(continuous dc)
(VAK=12Vdc,RL=140Ω)
IGT
15
200
mA
V
(Note2.2)
(Note2.2)
(Note2.1)
Gate Trigger Voltage (continuous dc)
(VAK=12Vdc,RL=140Ω)
VGT
-
0.1
5
-
-
-
0.8
Gate threshold Voltage
VGD
dv/dt
-
-
V
(VD=12VDRM RL=3.3KΩ RGK=220Ω)
Critical Rate of Rise Off-State Voltage
(VD=0.67VDRM; RGK=220Ω)
TJ=125℃
V/㎲
IH
Holding Current(VD=12V;IGT=0.5mA)
Latching Current(VD=12V;IGT=0.5mA)
Dynamic resistance
-
-
-
2
2
-
5
6
mA
mA
mΩ
IL
Rd
TJ=125℃
46
*Notes:
2.1 Pulse Width ≤1.0ms,Duty cycle≤1%
2.2 RGK Current is not Included in measurement.
2/5
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
