WBR13003B2D
High Voltage Fast -Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
■ Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed switching
characteristics required such as lighting system,switching mode
power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCES
VCEO
VEBO
IC
Collector -Emitter Voltage
VBE=0
IB=0
600
400
V
V
Collector -Emitter voltage
Emitter-Bade Voltage
Collector Current
IC=0
9.0
V
1.2
A
ICP
Collector pulse Current
Base Current
2.4
A
IB
0.75
1.5
A
IBM
Base Peak Current
tP=5ms
A
PC
Total dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
20
W
℃
℃
TJ
-40~150
-40~150
TSTG
Thermal Characteristics
Symbol
Parameter
Value
Units
RӨJC
RӨJA
Thermal Resistance Junction to Case
6.25
89
℃/W
℃/W
Thermal Resistance Junction to Ambient
Rev.A Mar.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
