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WBR13003B2D 参数 Datasheet PDF下载

WBR13003B2D图片预览
型号: WBR13003B2D
PDF下载: 下载PDF文件 查看货源
内容描述: 高压快 - 切换NPN功率晶体管 [High Voltage Fast -Switching NPN Power Transistor]
分类和应用: 晶体晶体管高压
文件页数/大小: 5 页 / 324 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WBR13003B2D  
High Voltage Fast -Switching NPN Power Transistor  
Features  
Very High Switching Speed  
High Voltage Capability  
Wide Reverse Bias SOA  
Built-in freewheeling diode  
General Description  
This Device is designed for high voltage, High speed switching  
characteristics required such as lighting system,switching mode  
power supply.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Test Conditions  
Value  
Units  
VCES  
VCEO  
VEBO  
IC  
Collector -Emitter Voltage  
VBE=0  
IB=0  
600  
400  
V
V
Collector -Emitter voltage  
Emitter-Bade Voltage  
Collector Current  
IC=0  
9.0  
V
1.2  
A
ICP  
Collector pulse Current  
Base Current  
2.4  
A
IB  
0.75  
1.5  
A
IBM  
Base Peak Current  
tP=5ms  
A
PC  
Total dissipation at Tc=25  
Operation Junction Temperature  
Storage Temperature  
20  
W
TJ  
-40~150  
-40~150  
TSTG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
RӨJC  
RӨJA  
Thermal Resistance Junction to Case  
6.25  
89  
℃/W  
℃/W  
Thermal Resistance Junction to Ambient  
Rev.A Mar.2011  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.