WBR13003B3
High Voltage Fast -Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such ascompact
electronic energy saving lamps, electronic ballast and
mobile phone chargers power Switch circuit, is the core
component of such electronic products.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCES
VCEO
VEBO
IC
Collector -Emitter Voltage
VBE=0
IB=0
600
450
V
V
Collector -Emitter voltage
Emitter-Bade Voltage
IC=0
9.0
V
Collector Current
1.0
A
ICP
Collector pulse Current
Total dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
2.0
A
PC
18
W
℃
℃
TJ
150
TSTG
-40~150
Thermal Characteristics
Symbol
Parameter
Value
Units
RӨJC
RӨJA
Thermal Resistance Junction to Case
6.94
89
℃/W
℃/W
Thermal Resistance Junction to Ambient
Rev.A Mar.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
