WBR13003LD
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ High Voltage Capability
◆ Wide Soa
◆ Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
ystem, switching mode power supply.
Absolute Maximum Ratings(Tc = 25°C)
Symbol
VCES
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Test Conditions
Value
400
Units
V
V
VBE = 0
VCEO
200
IB = 0
IC = 0
VEBO
IC
Emitter-Base Voltage
Collector Current
9.0
1.2
3.0
10
V
A
ICP
PC
Collector pulse Current
A
Total Dissipation at Tc = 25℃
W
TJ
Operation Junction Temperature
Storage Temperature
150
℃
℃
TSTG
- 40 ~ 150
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
RθJA
Thermal Resistance Junction to Case
3.12
89
℃/W
℃/W
Thermal Resistance Junction to Ambient
Jan 2009. Rev. 0
.
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved
T02-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
