WBP3308
High Voltage Fast-Switching NPN Power Transistor
Features
■
■
■
Very high switching speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High
speed switching characteristics required such as
lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCBO
Collect-Emitter Voltage
VBE=0
IB=0
900
V
V
V
A
A
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
500
IC=0
7
7
14
ICP
Collector pulse Current
Base Current
(Note)
IB
3
PC
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
45
W
℃
℃
TJ
150
-55~150
TSTG
Thermal Characteristics
Symbol
Parameter
Value
Units
RӨJC
Thermal Resistance Junction to Case
2.78
℃/W
Rev.A02 Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
