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WBN13003B 参数 Datasheet PDF下载

WBN13003B图片预览
型号: WBN13003B
PDF下载: 下载PDF文件 查看货源
内容描述: HighVoltageFast - SwitchingNPNPowerTransistor [HighVoltageFast-SwitchingNPNPowerTransistor]
分类和应用:
文件页数/大小: 5 页 / 294 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
 浏览型号WBN13003B的Datasheet PDF文件第2页浏览型号WBN13003B的Datasheet PDF文件第3页浏览型号WBN13003B的Datasheet PDF文件第4页浏览型号WBN13003B的Datasheet PDF文件第5页  
WBN13003B  
HighVoltageFast-SwitchingNPNPowerTransistor  
Features  
Very High Switching Speed  
High Voltage Capability  
Wide Reverse Bias SOA  
General Description  
This Device is designed for high voltage, High speed  
switching characteristics required such as lighting  
system,switching mode power supply.  
Absolute Maximum Ratings  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
TestConditions  
Value  
600  
Units  
Collector -Emitter Voltage  
Collector -Emitter voltage  
Emitter-Bade Voltage  
Collector Current  
VBE=0  
IB=0  
V
V
400  
IC=0  
9.0  
V
1.5  
A
ICP  
Collector pulse Current  
Base Current  
3.0  
A
IB  
0.75  
1.5  
A
IBM  
Base Peak Current  
tP=5ms  
A
PC  
Total dissipation at Tc=25  
Operation Junction Temperature  
Storage Temperature  
30  
W
TJ  
-40~150  
-40~150  
TSTG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
4.16  
89  
Units  
℃/W  
℃/W  
RӨJC  
RӨJA  
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
Rev.A Aug.2010  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.