WBN13003B
HighVoltageFast-SwitchingNPNPowerTransistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
Parameter
TestConditions
Value
600
Units
Collector -Emitter Voltage
Collector -Emitter voltage
Emitter-Bade Voltage
Collector Current
VBE=0
IB=0
V
V
400
IC=0
9.0
V
1.5
A
ICP
Collector pulse Current
Base Current
3.0
A
IB
0.75
1.5
A
IBM
Base Peak Current
tP=5ms
A
PC
Total dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
30
W
℃
℃
TJ
-40~150
-40~150
TSTG
Thermal Characteristics
Symbol
Parameter
Value
4.16
89
Units
℃/W
℃/W
RӨJC
RӨJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.