WBN13003B2D
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Value
Units
Min Typ Max
Symbol
Parameter
Test Conditions
VCEO(sus)
VCE(sat)
VBE(sat)
ICBO
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Collector -Emitter Saturation Voltage Ic=0.2A,Ib=40mA
400
-
-
-
-
-
-
-
-
V
V
-
0.3
1.2
0.1
0.25
0.1
30
Base -Emitter Saturation Voltage
Collector -Base Cutoff Current
Collector -EmitterCutoff Current
Emitter -Base Cutoff Current
DC Current Gain
Ic=0.2A,Ib=40mA
Vcb=600V Ie=0
Vce=400V Ib=0
Veb=7V Ic=0
-
V
-
mA
mA
mA
ICEO
-
IEBO
-
hFE
Vce=10V,Ic=10mA
10
Vce=10V Ic=50mA
F=1MHz
fT
Characteristic frequency
5
-
-
MHz
ton
ts
Turn -on Time
Storage Time
0.2
-
1.0
4.0
0.4
1.8
Vcc=5V, Ic=0.25A
1.5
µs
V
tf
Fall Time
0.15
VF
Diode Forward Voltage
IF=0.6A
Note :
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
