STU4A60
Electrical Characteristics (TC=25℃ unless otherwise noted)
Characteristics
Symbol
IDRM/IRRM
VTM
Min Typ. Max Unit
off-state leakage current
TJ=125
℃
-
-
100
1.2
500
1.7
μA
V
(VAK= VDRM/VRRM Single phase, half wave)
Forward “On” voltage (IT=5A, Inst. Measurement)
T2+,G+
T2+,G-
T2-,G-
T2-,G+
T2+,G+
T2+,G-
T2-,G-
T2-,G+
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
5
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
IGT
mA
5
10
1.5
1.5
1.5
2
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
)
VGT
V
Gate threshold Voltage
VGD
TJ=125℃
TJ=125℃
0.2
3
-
-
-
-
V
ＶＤ=1/2VDRM
,
Critical Rate of Rise of Off-State Voltage at Commutation
(VD=0.67VDRM ;(dｉ/dｔ)Ｃ=-1A/ms)
Holding Current
(dv/dt)c
V/μs
IH
IL
-
-
2
2
-
mA
mA
latching current
6
2/5
Steady, all for your advance.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
