SFP70N06
P70N
Silicon N-Channel MOSFET
Features
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70A,60V, R
DS(on)
(Max0.014Ω)@V
GS
=10V
Ultra-low Gate charge(Typical 70nC)
Low Crss (Typical 160pF)
Improved dv/dt capability
100%Avalanche Tested
Maximum Junction Temperature Range(175℃)
General Description
This Power MOSFET is produced using Semiwell's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche
characteristics,DC-DC
Converters
and
power
management in portable and,battery operated products.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
1/8 form Case for 5 seconds
Junction and Storage Temperature
Maximum Lead Temperature for soldering purpose,
300
1.05
-55~175
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note3)
(Note1)
51
280
±25
800
7.0
158
A
A
V
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
60
70
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
-
Typ
-
0.5
-
Max
0.95
-
62.5
Units
℃/W
℃/W
℃/W
Rev.A Oct.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
