SFP5N50
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
Min
Type Max
Unit
nA
Gate leakage current
-
±30
-
-
-
-
±100
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
-
V
1
μA
IDSS
VDS = 500 V, VGS = 0 V
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
ΔBVDSS/
ΔTJ
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to
25℃
500
-
-
-
-
V
0.55
V/℃
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 2.25A
VDS = 40 V, ID = 2.25A
VDS = 25 V,
2
-
-
-
-
-
-
-
-
-
-
4
V
Ω
S
1.16
4.2
1.6
-
Ciss
800
1050
100
22
VGS = 0 V,
pF
ns
Reverse transfer capacitance
Output capacitance
Crss
76
17
15
40
85
45
f = 1 MHz
Coss
Rise time
tr
VDD =250 V,
ID =4.5A
40
Turn−on time
Switching time
ton
90
RG=25Ω
Fall time
tf
180
100
(Note4,5)
Turn−off time
Total gate charge (gate−source
plus gate−drain)
toff
Qg
VDD = 400 V,
VGS = 10 V,
ID =5 A
-
32
44
nC
Gate−source charge
Qgs
Qgd
-
-
3.7
15
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
Test Condition
Min Type Max Unit
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
5
18
1.4
-
A
-
-
A
IDR =5A, VGS = 0 V
IDR =5A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
Reverse recovery time
305
2.6
ns
μC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=24mH,IAS=5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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