SFF4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V,RDS(on)(Max 2.2Ω)@VGS=10V
■
■
■
Ultra-low Gate Charge(Typical 16nC)
Fast Switching Capability
100%Avalanche Tested
■ Isolation Voltage(VISO=4000V AC)
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
Value
600
4*
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
2.5*
16*
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
240
10
mJ
mJ
V/ ns
W
EAR
dv/dt
4.5
33
PD
0.26
-55~150
300
W/℃
℃
TJ,Tstg
TL
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
3.79
62.5
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
-
-
℃
/W
-
-
℃/W
Rev.A Jun.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.