Silicon Controlled Rectifiers
Features
G
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM)
A
K
General Description
Sensitive gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control circuit
in power tool, inrush current limit circuit and heating control
system.
TO202-3
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
Ratings
Units
Repetitive Peak Off-State Voltage
VDRM
600
V
Ti =60 °C
Average On-State Current(180°
Conduction Angle)
1.35
0.9
4
IT(AV)
A
A
Tamb=25 °C
Ti =60 °C
R.M.S On-State Current(180°
Conduction Angle)
IT(RMS)
Tamb=25 °C
1.35
1/2 Cycle, 60Hz, Sine
Wave
Non-Repetitive
Surge On-State Current
ITSM
33
A
I2t
4.5
50
A2s
A/㎲
W
I2t for Fusing
t =10ms
F=60Hz,Tj=125 °C
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
di/dt
PGM
0.5
Forward Average Gate Power
Dissipation
Tj=125 °C
PG(AV)
0.2
W
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
IFGM
TJ
1.2A
A
°C
°C
-40-125 °C
-40-150 °C
TSTG
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
RθJA
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
15
℃/W
100
℃/W
Jan 2009. Rev. 0
1/5
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
