SBN130031
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Symbol
Parameter
Test conditions
Units
Min
Typ Max
BVCBO
BVCEO
VCE(sat)
VBE(sat)
ICBO
Collector-Base Breakdown Voltage
Ic=0.5mA,Ie=0
600
V
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400
-
-
-
-
-
-
-
-
-
V
V
Collector -Emitter Saturation Voltage Ic=200mA,Ib=100mA
-
-
1.6
1.2
10
20
20
40
-
Base -Emitter saturation Voltage
Collector -Base Cutoff Current
Collector -Emitter Cutoff Current
Emitter -Base Cutoff Current
Ic=200mA,Ib=100mA
Vcb=550V,Ie=0mA
Vce=400V,Ib=0mA
Veb=9V,Ic=0mA
V
-
µA
µA
µA
ICEO
-
IEBO
-
Vce=20V,Ic=20mA
Vce=5V,Ic=1mA
10
9
hFE
DC Current Gain
ts
tf
Storage Time
Fall Time
VCC=250V
IC=5 IB
IB1=-IB2=0.04A
2
-
-
-
-
µs
0.8
Note:
Pulse Test: Pulse width 300,Duty cycle 2%
2/5
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
