K2837
Silicon N-Channel MOSFET
Features
■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 90nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance
, provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
Value
500
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
24
A
ID
15.2
96
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
TotalPower Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
1100
29
mJ
mJ
V/ ns
W
EAR
dv/dt
4.5
271
PD
2.22
-55~150
300
W/℃
℃
TJ,Tstg
TL
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
0.46
40
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
-
-
℃/W
℃/W
-
-
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
