K2698
Silicon N-Channel MOSFET
Features
■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 42nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology.this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
AC-DC switching power supplies, DC-DC power Converters high
voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
Value
500
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
18
A
ID
12.7
80
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
330
mJ
mJ
V/ ns
W
EAR
dv/dt
PD
27.7
4.5
208
TJ,Tstg
TL
-55~150
300
℃
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
0.60
40
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
-
-
℃/W
℃/W
-
-
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.