RoHS
MPSA93
MPSA93
FEATURES
Power dissipation
TRANSISTOR (PNP)
TO-92
1. EMITTER
2. BASE
P
CM:
0.625
W (Tamb=25℃)
3. COLLECTOR
Collector current
I
CM:
-0.5
A
Collector-base voltage
V
(BR)CBO
:
-200
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
W
Transition frequency
J
E
E
C
E
L
V(BR)
EBO
I
CBO
R
T
*
*
*
*
Test
Ic= -100µA, I
E
=0
I
C
= -1mA , I
B
=0
O
unless otherwise specified)
conditions
MIN
-200
-200
-5
-0.25
-0.1
25
40
25
-0.4
-0.9
50
V
V
MHz
TYP
MAX
UNIT
V
V
V
uA
u
A
N
C
I
C
1 2 3
O
L
,
.
D
T
I
E
= -100µA, I
C
=0
V
CB
= -160V, I
E
=0
V
EB
= -3V, I
C
=0
I
EBO
V
CE
=-10V, I
C
= -1mA
V
CE
=-10V, I
C
= -10mA
V
CE
=-10V, I
C
= -30mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
=-20V, I
C
= -10mA
f =100MHz
h
FE
V
CE(sat)
V
BE(sat)
f
T
* Pulse test: Pulse width≤300µs, Duty cycle≤2%.
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