RoHS
MMDT3906
MMDT3906
P
CM:
Multi-Chip TRANSISTOR (PNP)
FEATURES
Power dissipation
SOT-363
0.2
W (Tamb=25℃)
Collector current
I
CM:
-0.2
A
Collector-base voltage
V
(BR)CBO
:
-40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
MAKING: K3N
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
conditions
MIN
TYP
MAX
UNIT
V
V
V
I
EBO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
J
E
E
C
E
L
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
R
T
O
Ic=
-10
µA, I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-10
µA, I
C
=0
N
C
I
C
-40
-40
-5
60
80
100
60
30
O
L
,
.
D
T
V
CB
=
-30
V, I
E
=0
V
EB
=
-5
V, I
C
=0
-0.05
-0.05
µA
µA
V
CE
=
-1
V, I
C
=
-0.1
mA
V
CE
=
-1
V, I
C
=
-1
mA
V
CE
=
-1
V, I
C
=
-10
mA
V
CE
=
-1
V, I
C
=
-50
mA
300
h
FE(5)
V
CE
=
-1
V, I
C
=
-100
mA
I
C
=
-10
mA, I
B
=
-1
mA
I
C
=
-50
mA, I
B
=
-5
mA
I
C
=
-10
mA, I
B
=
-1
mA
I
C
=
-50
mA, I
B
=
-5
mA
V
CE
=
-20
V, I
C
=
-10
mA, f=
100
MHz
V
CB
=
-5
V, I
E
=0, f=
1
MHz
V
CE
=
-5
V, I
c
=
-0.1
mA,
f=1KHZ, Rg=
1
KΩ
V
CC
=-3V, V
BE
=0.5V
I
C
=-10mA , I
B1
=-I
B2
=- 1mA
V
CC
=-3V, I
C
=-10mA
I
B1
=-I
B2
=- 1mA
V
CE(sat)1
V
CE(sat)2
-0.25
-0.4
-0.65
V
V
V
V
MHz
V
BE(sat)1
V
BE(sat)2
-0.85
-0.95
f
T
C
ob
NF
250
4.5
4
35
35
225
75
pF
dB
nS
nS
nS
nS
t
d
t
r
t
S
t
f
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
