RoHS
MMDT2907A
FEATURES
Power dissipation
P
CM
:
MMDT2907A
TRANSISTOR (PNP)
0.15
W (Tamb=25℃)
Collector current
I
CM
:
-0.6
A
Collector-base voltage
V
(BR)CBO
:
-60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
unless otherwise specified)
Test
Ic= -10
µ
A, I
E
=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
W
Input Capacitance
Delay time
Rise time
Storage time
Fall time
J
E
E
C
E
L
R
T
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
(BR)EBO
V
CE
=-10V, I
C
= -0.1mA
V
CE
=-10V, I
C
= -1mA
O
Ic= -10mA, I
B
=0
I
E
=-10
µ
A, I
C
=0
V
CB
=-50V, I
E
=0
N
conditions
C
I
C
-5
O
L
,
.
D
T
MIN
-60
-60
MAX
UNIT
V
V
V
-0. 01
-0. 01
75
100
100
100
50
-0.4
-1.6
-1.3
-2.6
200
300
µ
A
µ
A
V
EB
= -3V, I
C
=0
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
= -150mA
V
CE
=-10V, I
C
=-500mA
V
CE
(sat)1
I
C
=-150 mA, I
B
=-15mA
I
C
=-500 mA, I
B
=- 50mA
I
C
=-150 mA, I
B
=-15mA
I
C
=-500 mA, I
B
= -50mA
V
CE
=-20V, I
C
= -50mA
V
V
V
V
MHz
V
CE
(sat)2
V
BE
(sat)1
V
BE
(sat)2
f
T
C
ob
C
ib
t
d
t
r
t
S
t
f
f=
100MHz
V
CB
=-10V, I
E
= 0
f=
1MHz
V
EB
=-2V, I
C
= 0
8
pF
f=
1MHz
V
CC
=-30V, I
C
=-150mA,
I
B1
=-15mA
V
CC
=-6V, I
C
=-150mA
I
B1
= I
B2
= -15mA
30
10
40
225
60
pF
nS
nS
nS
nS
Marking
K2F
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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