RoHS
MMDT2222A
MMDT2222A
P
CM
:
TRANSISTOR (NPN)
FEATURES
Power dissipation
0.15
W (Tamb=25℃)
Collector current
I
CM
:
0.6
A
Collector-base voltage
V
(BR)CBO
:
75
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
h
FE(6)
unless otherwise specified)
Test
conditions
Ic= 10
µ
A, I
E
=0
Ic= 10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
EB
= 3V, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
C
= 10mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
W
Noise Figure
Delay time
Rise time
Storage time
Fall time
J
E
E
C
E
L
V
CE
(sat)1
V
CE
(sat)2
V
BE
(sat)2
V
BE
(sat)1
R
T
f
T
V
CE
=10V, I
C
= 150mA
V
CE
=10V, I
C
= 500mA
V
CE
=1V, I
C
= 150mA
O
N
C
I
MIN
75
6
40
C
O
L
,
.
D
T
MAX
UNIT
V
V
V
0. 01
0. 01
35
50
75
100
40
35
0.3
1
0.6
1.2
2
300
8
25
4
10
25
225
60
300
µ
A
µ
A
I
C
=150 mA, I
B
= 15mA
I
C
=500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
I
C
=500 mA, I
B
= 50mA
V
CE
=20V, I
C
= 20mA
V
V
V
V
MHz
pF
pF
dB
nS
nS
nS
nS
f=
100MHz
V
CB
=10V, I
E
= 0
C
ob
C
ib
NF
t
d
t
r
t
S
t
f
f=
1MHz
V
EB
=0.5V, I
C
= 0
f=
1MHz
V
CE
=10V, I
C
=100µA
f=
1KHz,Rs=1KΩ
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
= 15mA
Marking
:K1P
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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