RoHS
M M B TA 9 2 LT 1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
HIGH VOLTGE TRANDIDTOR
3
Complement
to MMBTA42LT1
High Collector-Emitter Voltage:Vcbo=-300V
Collector current:Ic=-500mA
o
Collector Dissipation:Pc=225mW( Ta=25 C )
1
2
1.
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
Ic
T
j
P
D
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Breakdown Voltage#
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
W
Collector-Base Capacitance
Current Gain-Bandwidth Product
J
E
E
C
E
L
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
R
T
T
stg
H
FE
V
CE(sat)
V
BE(sat)
O
N
C
I
Rating
-300
-300
-5
-500
225
150
-55~150
V
V
V
C
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
L
,
.
Unit:mm
D
T
0.95
0.95
(Ta=25 C)
o
Unit
V
V
V
mA
mW
O
O
C
C
(Ta=25 C)
o
MIN. TYP. MAX. Unit
-300
-300
-5
-250
-100
40
250
-0.5
-0.9
6
50
100
V
V
PF
Condition
I
C
=-100 A I
E
=0
I
C
=-1mA I
B
=0
I
E
=-100 A I
C
=0
V
CB
=-200V, V
e
=0
V
CB
=-3V, I
C
=0
V
CE
=-10V, I
C
=-10mA
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
V
CB
=-20V, I
E
=0 f=100MHz
nA
nA
C
ob
f
T
MHz V
CE
=-20V I
C
=-10mA
f=100MHz
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
#
Pulse Test: Pulse Width
<
300uS Duty cycle
<
2%
DEVICE MARKING:
MMBTA92LT1=2D
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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