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MMBTA42LT1 参数 Datasheet PDF下载

MMBTA42LT1图片预览
型号: MMBTA42LT1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管 [NPN EPITAXIAL SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 163 K
品牌: WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
 浏览型号MMBTA42LT1的Datasheet PDF文件第1页  
RoHS
M M BTA 42 LT1
Typical Characteristics
120
100
80
60
40
20
0
0.1
1.0
10
h
FE
, CURRENT GAIN
T
J
=125 C
V
CE
=10Vdc
+25 C
-55 C
I
C,
COLLECTOR CURRENT (mA)
DC Current Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
V,VOLTAGE (VOLTS)
1.0
I
C,
COLLECTOR CURRENT (mA)
On
Voltages
F
T
,CURRENT-GAIN-BAINDWIDTH (MHz)
W
J
E
E
C
E
L
10
80
70
60
50
40
30
20
10
1.0
2.0
R
T
100
O
N
C
I
C
O
L
,
.
100
D
T
V
C E(sat)
@ 25 C, I
C
I
B
= 10
V
C E(sat)
@125 C, I
C
I
B
= 10
V
C E(sat)
@-55 C, I
C
I
B
= 10
V
B E(sat)
@ 25 C, I
C
I
B
= 10
V
B E(sat)
@125 C, I
C
I
B
= 10
V
B E(sat)
@-55 C, I
C
I
B
= 10
V
BE(sat)
@ 25 C, V
CE
= 10V
V
BE(sat)
@125 C, V
CE
= 10V
V
BE(sat)
@-55 C, V
CE
= 10V
T
J
=25 C
V
CE
=20V
f=20MHz
3.0
5.0 7.0 10
20
30
50 70 100
I
C,
COLLECTOR CURRENT (mA)
Current-Gain-- Bandwidth
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com