RoHS
MMBT9014LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
PRF-AMPLIFIER,LOW LEVEL&LOW NOISE
3
Complemen
to MMPT9015LT1
Collector-current:Ic=100mA
Collector-Emiller Voltage:V
CE
=45V
High Totalpower Dissipation Pc=225mW
High life And Good Linearity
1
2
1.
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector -Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Breakdown Voltage#
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
W
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
J
E
E
C
E
L
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
R
T
V
EBO
Ic
T
j
P
D
T
stg
H
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
O
N
50
50
C
I
Rating
50
45
5
100
225
150
-55~150
V
V
V
nA
nA
V
V
V
PF
dB
C
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
L
,
.
Unit:mm
D
T
0.95
0.95
(Ta=25 C)
o
Unit
V
V
V
mA
mW
O
O
C
C
(Ta=25 C)
o
MIN. TYP. MAX. Unit
50
45
5
Condition
I
C
=100 A I
E
=0
I
C
=1mA I
B
=0
I
E
=100 A I
C
=0
V
CB
=50V, V
C
=0
V
CB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
C
e
=5V, I
C
=2mA
V
CB
=10V, I
E
=10mA,f=100MHz
V
CE
=5V I
C
=0.2mA
f=1MHz Rs=2Kohm
60
300 1000
0.3
1.00
6.7
3.5
10
0.58 0.63
2.2
150 270
C
ob
f
T
MHz V
CE
=5V I
C
=10mA
NF
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
#
Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
MMBT9014LT1=L6
o
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
