RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
HIGH VOLTAGE TRANSISTOR
Collector Dissipation:Pc-225mW(Ta=25 )
Collector-Emiller Voltage: V
CEO=
160V
1.
3
o
1
2
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector -Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter Breakdown Voltage#
W
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
J
E
E
C
E
L
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
R
T
V
EBO
Ic
T
j
P
D
T
stg
O
N
50
50
C
I
Rating
180
160
6
600
225
150
-55~150
V
V
V
nA
nA
C
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
L
,
.
Unit:mm
D
T
0.95
0.95
(Ta=25 C)
o
Unit
V
V
V
mA
mW
O
O
C
C
(Ta=25 C)
o
MIN. TYP. MAX. Unit
180
160
6
Condition
I
C
=100 A I
E
=0
I
C
=1mA I
B
=0
I
E
=10 A I
C
=0
V
CB
=120V, V
C
=0
V
CB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=-10mA
80
80
30
250
0.5
0.15
1
1
100
300
o
V
CE
=5V, I
C
=50mA
V
V
V
V
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
MHz V
CE
=10V, I
C
=10mA,f=100MHz
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
#
Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2N5551S=Z1
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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