RoHS
MMBT5401LT1 TRANSISTOR (PNP)
SOT-23 Plastic-Encapsulate Transistors
Features
Power dissipation
P
C M
: 0.3 W (Tamb=25 C)
Collector current
I
CM
: -0.6A
Collector-base Voltage
V
(BR)CBO
:-160V
2.9
1.9
0.95
O
SOT-23
1
1.
Operating and storage junction temperature range
T
j
, T
stg
: -55 C to +150 C
O
O
Electrical Characteristics
(Tamp=25 C unless otherwise specified)
o
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE(1)
H
FE(2)
H
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Collector-Emitter Saturation Voltage
Base-emitter saturation voltage
Transition Frequency
W
J
E
E
C
E
L
R
T
I
C
=-100 A, I
E
=0
I
C
=-1 mA, I
B
=0
I
E
=-10 A, I
B
=0
V
CB
=-120V, I
E
=0
V
EB
=-4V, I
C
=0mA
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-20V, I
C
=-50mA ,f=100MHz
O
N
C
I
C
2.4
1.3
O
0.4
L
,
.
3
2
D
T
1.BASE
2.EMITTER
3.COLLECTOR
0.95
Unit:mm
Test Condition
Min. Typ. Max. Unit
-160
-150
-5
-0.1
-0.1
80
100
50
-0.5
-1
100
V
V
MHz
200
V
V
V
A
A
Device Marking
MMBT5401LT1 = 2L
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
